Plasma Etch Rate Prediction

Use the form below to estimate etch rate based on key process conditions.

Enter Process Conditions

RF Power (W): 165–1475

Bias Voltage (V): 70–590

Chamber Pressure (mTorr): 30–195

SF₆ Flow Rate (sccm): 20–100

CF₄ Flow Rate (sccm): 15–95

O₂ Flow Rate (sccm): 10–90

Temperature (°C): 55–120

Predict Etch Rate

📖 Read the article: Smarter Semiconductors: How ML Neural Networks Optimize Plasma Etching in Real Time.