Plasma Etch Rate Prediction

Use the form below to estimate etch rate based on key process conditions.

RF Power (W): 165-1475

Bias Voltage (V): 70-590

Chamber Pressure (mTorr): 30-195

SF₆ Flow Rate (sccm): 20-100

CF₄ Flow Rate (sccm): 15-95

O₂ Flow Rate: 10-90 (sccm)

Temperature (°C): 55-120

Predicted Etch Rate